Description
Nano Silicon Carbide (Nano SiC, 50 nm) is an ultra high-purity nanoceramic powder engineered for professional and research-grade applications that demand extreme hardness, superior thermal conductivity, and chemical stability. With an average particle size of ≈50 nm and a purity ≥ 99.9 wt%, it delivers exceptional performance in semiconductors, energy systems, advanced coatings, and structural composites.
Manufactured through precision nano-synthesis and strict impurity control, this SiC powder ensures uniform particle distribution, minimal metallic contamination, and outstanding sintering behavior—ideal for use in electronic ceramics, high-temperature materials, and aerospace components.
CAS No.: 409-21-2
EINECS No.: 206-991-8
Chemical Formula: SiC
Molecular Weight: 40.09
Grade: Ultra High Purity
Specifications:
Appearance: Gray to dark gray fine powder
Average Particle Size (D₅₀) ≈50 nm
Purity (SiC): ≥99.9 wt%
Fe (Iron): ≤350 ppm
Cu (Copper): ≤200 ppm
Pb (Lead): ≤20 ppm
Cl (Chlorine): ≤10 ppm
Ni (Nickel): ≤70 ppm
Ca (Calcium): ≤30 ppm
Sb (Antimony): ≤3 ppm
Cd (Cadmium): ≤1 ppm
Total Metallic Impurities: ≤0.1 wt%
Key Features:
1) Ultra High Purity (≥99.9%) – Low metallic impurities for precise, contamination-free processing.
2) Nano-Scale (≈50 nm) – Large surface area enhances sintering activity, dispersion, and interface bonding.
3) Exceptional Hardness (Mohs 9.2) – Superior abrasion resistance for high-friction and wear-intensive uses.
4) High Thermal Conductivity – Efficient heat dissipation for power electronics and thermal management.
5) Low Thermal Expansion – Maintains structural integrity under rapid temperature changes.
6) Chemical Inertness – Resistant to acids, alkalis, and oxidizing atmospheres.
7) Semiconducting Behavior – Wide-bandgap semiconductor suitable for high-power and high-frequency devices.
Applications:
1) Advanced Ceramics & Abrasives: Nano-SiC for ultra-fine polishing media, precision grinding, and sintering additives.
2) Semiconductors & Electronics: Used in SiC-based wafers, MOSFETs, diodes, and thermal interface materials.
3) Energy Systems: Applied in solid oxide fuel cells, lithium battery anodes, and nuclear thermal components.
4) Aerospace & Automotive: Lightweight composites, high-temperature coatings, and friction-resistant systems.
5) Industrial Equipment: High-performance seals, bearings, and nozzles for extreme environments.
6) Environmental Technology: Employed in photocatalytic coatings, filtration, and gas-purification systems.
50 nm Nano Silicon Carbide (SiC) represents the next generation of ultra high-purity nanoceramic materials, merging extreme hardness, exceptional thermal stability, and controllable semiconducting properties. Its nano-scale precision and chemical robustness make it indispensable for advanced research, defense technology, electronic manufacturing, and high-temperature engineering.